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- W2023698211 abstract "The Czochralski-grown silicon crystals plastically deformed at 680±C to the residual strain of 5% and subsequently annealed in the temperature range of 650{850±C were studied by the IR absorption and DLTS techniques. The formation and disappearance kinetics were investigated for several weak IR absorption lines around the 1000 cm¡1 wave number, which were previously related to the deformation-induced defects of non-dislocation nature in the dislocation trails. In parallel, the spectrum and concentrations of the deep-level centers in the upper half of the gap were measured by DLTS. It is found that the deep-level centers and op- tically active defects exhibit a common behavior during the post-deformation heat treatments. However, a direct correspondence between the IR and DLTS features cannot be established be- cause of the higher concentration of the deep-level centers as compared to the optically active defects." @default.
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- W2023698211 date "2009-10-01" @default.
- W2023698211 modified "2023-09-26" @default.
- W2023698211 title "Comparative Study of Electrical and Optical Properties of Plastically Deformed Silicon" @default.
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- W2023698211 doi "https://doi.org/10.4028/www.scientific.net/ssp.156-158.425" @default.
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