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- W2023702960 abstract "A thin capping layer of annealed GaAs (∼210 Å) grown at low temperature (LT-GaAs) can effectively block incident ions from penetrating into the growth substrate. Ion-bombarded, multiple quantum well structures capped by an annealed LT-GaAs layer show a dramatic improvement in the photoluminescence, compared to samples capped with ‘‘normal’’ GaAs. The improvement appears to be correlated with the microstructures of the LT-GaAs, since the improvement is particularly notable for samples annealed at 600 °C. This improvement in low energy ion-induced damage is primarily the result of the reduced channeling of ions through the LT-GaAs layer. These results suggest a potential application of LT-GaAs in reducing ion damage and underscore the importance of the microstructure of arsenic precipitates in LT-GaAs layers." @default.
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- W2023702960 date "1996-09-16" @default.
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- W2023702960 title "Improvement in low energy ion‐induced damage with a low temperature GaAs capping layer" @default.
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- W2023702960 doi "https://doi.org/10.1063/1.118011" @default.
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