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- W2023764545 abstract "The effect of annealing on the ferroelectric properties of Pt-based thin film capacitors of Sb-doped lead zirconate titanate [Pt/Pb(Zr 0.48 Ti 0.52 )O 3 /Pt/SiO 2 /Si] were investigated. Undoped Pb(Zr 0.48 Ti 0.52 )O 3 (PZT0) and Sb-doped Pb(Zr 0.48 Ti 0.52 )O 3 (PZST07) thin films were annealed in oxygen atmosphere at 650°C for 30 min. The Sb cation in a PZT thin film before and after annealing was confirmed to be trivalent (Sb 3+ ) by X-ray photoelectron spectroscopy (XPS). The grain sizes of undoped PZT (PZT0) and Sb-doped PZT (PZST07) thin films after annealing are seen to increase. These changes of grain size affect the fatigue properties of PZT thin films. Annealed Sb-doped PZT (PZST07) thin films show good fatigue behavior (fatigue free up to 10 11 switching cycles) and a larger P * r - P ∧ r value (31 µ C/cm 2 ) than SrBi 2 Ta 2 O 9 (SBT) thin films." @default.
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- W2023764545 date "1999-01-01" @default.
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- W2023764545 title "Effect of Annealing on Fatigue Properties of Sb-Doped Lead Zirconate Titanate Thin Films Deposited by DC Reactive Sputtering" @default.
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- W2023764545 doi "https://doi.org/10.1143/jjap.38.122" @default.
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