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- W2023779156 abstract "Abstract A 50 nm samarium film capped with a 7 nm palladium overlayer switched from a metallic to semiconducting state during ex-situ hydrogen loading via electrochemical means at room temperature. The transition is accompanied by a change in transmittance measured during hydrogen loading and the associated optical appearance. The monitoring of working electrode (WE) potential, the transmittance and chi potential difference (Δ χ ) has been used to identify the phases present during hydrogen loading. Deloading of hydrogen has been studied in open circuit potential condition. Glancing angle X-ray diffraction (GAXRD) studies show that the rhombohedral structure of metallic samarium film ( a 0 =8.989 A) changes to hexagonal structure of the SmH 3− δ film with average lattice parameters of a =3.775 A and c =6.743 A. A direct optical band gap of 2.9 eV has been obtained for SmH 3− δ film and 2.0 eV for SmH 2 ± e film from reflectance and transmittance data. Removal of hydrogen from SmH 3− δ leads to the formation of localized states within the band whose signature is clearly seen in transmittance and Tauc’s plot curves of SmH 2 ± e film. The Hall coefficient R H measured as a function of hydrogen concentration, changes from a metal-like value −14.23×10 -10 m 3 /C to −1001.1×10 −10 m 3 /C for SmH 3− δ films. On unloading hydrogen, the value of R H changes to −3.56×10 −10 m 3 /C at the dihydride composition." @default.
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- W2023779156 date "2004-08-01" @default.
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- W2023779156 title "Electrochemical loading of hydrogen in palladium capped samarium thin film: structural, electrical, and optical properties" @default.
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- W2023779156 doi "https://doi.org/10.1016/j.electacta.2004.02.044" @default.
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