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- W2023785008 abstract "We investigate the impact of threading dislocation densities on the photovoltaic performance of single-junction (1J) n <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>+</sup> /p GaAs and dual-junction (2J) n <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>+</sup> /p InGaP/GaAs solar cells on Si substrate. Using our calibrated model, simulation predicts an efficiency of greater than 23% for a 1J GaAs cell on Si at AM1.5G spectrum at a threading dislocation density of 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>6</sup> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-2</sup> . The design of a metamorphic 2J InGaP/GaAs solar cell on Si was optimized by tailoring the 2J cell structure on Si to achieve current matching between the subcells, taking into account a threading dislocation density of 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>6</sup> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-2</sup> . Finally, we present a novel and an optimized 2J InGaP/GaAs solar cell design on Si at a threading dislocation density of 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>6</sup> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-2</sup> , which exhibited a theoretical conversion efficiency of greater than 29% at AM1.5G spectrum, indicating a path for viable III-V multijunction cell technology on Si." @default.
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- W2023785008 date "2013-01-01" @default.
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- W2023785008 title "Impact of Threading Dislocations on the Design of GaAs and InGaP/GaAs Solar Cells on Si Using Finite Element Analysis" @default.
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- W2023785008 doi "https://doi.org/10.1109/jphotov.2012.2213073" @default.
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