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- W2023786178 abstract "We present a new ohmic contact material NiSi2 to n-type 6H-SiC with a low specific contact resistance. NiSi2 films are prepared by annealing the Ni and Si films separately deposited on (0 0 0 1)-oriented 6H-SiC substrates with carrier concentrations (n) ranging from 5.8×1016 to 2.5×1019 cm−3. The deposited films are annealed at 900 °C for 10 min in a flow of Ar gas containing 5 vol.% H2 gas. The specific contact resistance of NiSi2 contact exponentially decreases with increasing carrier concentrations of substrates. NiSi2 contacts formed on the substrates with n=2.5×1019 cm−3 show a relatively low specific contact resistance with 3.6×10−6 Ω cm2. Schottky barrier height of NiSi2 to n-type 6H-SiC is estimated to be 0.40±0.02 eV using a theoretical relationship for the carrier concentration dependence of the specific contact resistance." @default.
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- W2023786178 date "2002-12-01" @default.
- W2023786178 modified "2023-10-01" @default.
- W2023786178 title "Schottky barrier height of a new ohmic contact NiSi2 to n-type 6H-SiC" @default.
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- W2023786178 doi "https://doi.org/10.1016/s0038-1101(02)00181-8" @default.
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