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• W2023790764 abstract "We reported high-speed transport properties on gallium nitride (GaN) single nanowire (NW) transistors laterally grown on the (0001) sapphire substrates. Due to the preservation of surface stoichiometry and passivation effects by the facet growth of [112̅0]Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> /GaN, the 60nm-dia. SNW-MOSFET device of 0.2μm gate length was shown to exhibit a saturation current of 145μA, current on/off ratio of 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>5</sup> , sub-threshold swing of 85mV/dec, transconductance of 74μS, and unity current/power gain cut-off frequency f <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>T</sub> /f <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>max</sub> of 75/96GHz. From a 3D diffusion and drift model analysis, these electric characteristics can be ascribed to a polarization induced 2D electron gas (2DEG) effect with a density of 7 x 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>12</sup> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-2</sup> confined at the semi-polar {11̅01̅} GaN/Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> interfaces. Immune to the post-growth processing induced damage and stress effects, our device performance can be characterized by a channel mobility of 1600cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> /V-sec which approaches the intrinsic mobility value of bulk GaN." @default.
• W2023790764 created "2016-06-24" @default.
• W2023790764 creator A5013552549 @default.
• W2023790764 creator A5040856248 @default.
• W2023790764 creator A5043148329 @default.
• W2023790764 creator A5052863453 @default.
• W2023790764 date "2010-10-01" @default.
• W2023790764 modified "2023-10-16" @default.
• W2023790764 title "75GHz Ga2O3/GaN Single Nanowire Metal- Oxide-Semiconductor Field-Effect Transistors" @default.
• W2023790764 cites W2014694192 @default.
• W2023790764 cites W2026812619 @default.
• W2023790764 cites W2070098930 @default.
• W2023790764 cites W2090247414 @default.
• W2023790764 cites W2110426486 @default.
• W2023790764 cites W2116656110 @default.
• W2023790764 cites W2120150189 @default.
• W2023790764 cites W2134257347 @default.
• W2023790764 cites W2139228516 @default.
• W2023790764 cites W2139291142 @default.
• W2023790764 doi "https://doi.org/10.1109/csics.2010.5619673" @default.
• W2023790764 hasPublicationYear "2010" @default.
• W2023790764 type Work @default.
• W2023790764 sameAs 2023790764 @default.
• W2023790764 citedByCount "1" @default.
• W2023790764 countsByYear W20237907642023 @default.
• W2023790764 crossrefType "proceedings-article" @default.
• W2023790764 hasAuthorship W2023790764A5013552549 @default.
• W2023790764 hasAuthorship W2023790764A5040856248 @default.
• W2023790764 hasAuthorship W2023790764A5043148329 @default.
• W2023790764 hasAuthorship W2023790764A5052863453 @default.
• W2023790764 hasConcept C119599485 @default.
• W2023790764 hasConcept C121332964 @default.
• W2023790764 hasConcept C127413603 @default.
• W2023790764 hasConcept C165801399 @default.
• W2023790764 hasConcept C172385210 @default.
• W2023790764 hasConcept C184720557 @default.
• W2023790764 hasConcept C192562407 @default.
• W2023790764 hasConcept C2779283907 @default.
• W2023790764 hasConcept C49040817 @default.
• W2023790764 hasConcept C62520636 @default.
• W2023790764 hasConceptScore W2023790764C119599485 @default.
• W2023790764 hasConceptScore W2023790764C121332964 @default.
• W2023790764 hasConceptScore W2023790764C127413603 @default.
• W2023790764 hasConceptScore W2023790764C165801399 @default.
• W2023790764 hasConceptScore W2023790764C172385210 @default.
• W2023790764 hasConceptScore W2023790764C184720557 @default.
• W2023790764 hasConceptScore W2023790764C192562407 @default.
• W2023790764 hasConceptScore W2023790764C2779283907 @default.
• W2023790764 hasConceptScore W2023790764C49040817 @default.
• W2023790764 hasConceptScore W2023790764C62520636 @default.
• W2023790764 hasLocation W20237907641 @default.
• W2023790764 hasOpenAccess W2023790764 @default.
• W2023790764 hasPrimaryLocation W20237907641 @default.
• W2023790764 hasRelatedWork W1535591205 @default.
• W2023790764 hasRelatedWork W2013255779 @default.
• W2023790764 hasRelatedWork W2058676402 @default.
• W2023790764 hasRelatedWork W2086295977 @default.
• W2023790764 hasRelatedWork W2191036233 @default.
• W2023790764 hasRelatedWork W2292675962 @default.
• W2023790764 hasRelatedWork W2329285141 @default.
• W2023790764 hasRelatedWork W2399397734 @default.
• W2023790764 hasRelatedWork W2902546961 @default.
• W2023790764 hasRelatedWork W3023315379 @default.
• W2023790764 isParatext "false" @default.
• W2023790764 isRetracted "false" @default.
• W2023790764 magId "2023790764" @default.
• W2023790764 workType "article" @default.