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- W2023793433 abstract "Aligned nanowires are likely to be more suitable for applications in electronics and optoelectronics than randomly distributed nanowires. In this paper, by using a fast-heating-vapor-trapping (FHVT) method, we successfully synthesized aligned In2O3 nanobelt arrays on an Au-coated silicon substrate without the use of any templates. Studies found that the nanobelts exhibited unique bi-crystalline structures consisting of two single crystalline In2O3 nanobelts, most of which have the same growth direction along the [100] plane. Field-effect transistors were fabricated on the basis of single In2O3 nanowires and they exhibited typical n-type transistor performance, which showed a decent response to UV light exposure." @default.
- W2023793433 created "2016-06-24" @default.
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- W2023793433 date "2010-01-01" @default.
- W2023793433 modified "2023-09-23" @default.
- W2023793433 title "Fast-heating-vapor-trapping method to aligned indium oxide bi-crystalline nanobelts arrays and their electronic properties" @default.
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- W2023793433 doi "https://doi.org/10.1039/c0jm02189j" @default.
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