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- W2023800854 abstract "Growth of II-VI and III-V nitrides by MBE and MOCVD is being studied Using GaAs as a buffer and ZnMgSSe quaternary alloy as a cladding layer together with a ZnSe/ZnTe superlattice for ohmic contact, room temperature CW operation of II-VI lasers has been achieved. Focus topics include the (i) optical properties of ZnSe-based epilayers, (ii) the effect of GaAs buffer surface construction and initial growth condition of ZnSe on the defect density and (iii) etch-pit configuration of different type of defects in ZnSe-based epilayers. Multilayer p-GaN/MQW GaN-In 0.1 GaN/n-GaN were grown on sapphire substrate using MOVPE and plasma-assisted ionized source beam epitaxy. We investigated the (i)growth and properties of III-V nitride films by LP-MOVPE and PAMBE(Plasma Assisted Molecular Beam Epitaxy), (ii) etch-pit and wet etching of GaN/(0001)Al 2 O 3 , (iii) ohmic contacts of GaN and (iv) GaN Etching by CARIBE." @default.
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- W2023800854 date "1997-05-02" @default.
- W2023800854 modified "2023-09-23" @default.
- W2023800854 title "Wide-bandgap semiconductor laser: challenges for the future" @default.
- W2023800854 doi "https://doi.org/10.1117/12.273776" @default.
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