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• W2023807566 abstract "Magnetic tunnel junctions with HfO2 tunnel barriers were prepared through a combination of magnetron sputtering and atomic layer deposition. We investigated the tunneling transport behavior, including the tunnel magnetoresistance ratio and the current-voltage characteristics between room temperature and 2 K. Here, we achieved a tunneling magneto resistance ratio of 10.3% at room temperature and 19.3% at 2 K. Furthermore, we studied the bias-voltage and temperature dependencies and compared the results with those of commonly used alumina- and magnesia-based magnetic tunnel junctions. We observed a polycrystalline/amorphous electrode-barrier system via high-resolution transmission electron microscopy." @default.
• W2023807566 created "2016-06-24" @default.
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• W2023807566 date "2014-09-29" @default.
• W2023807566 modified "2023-10-16" @default.
• W2023807566 title "Temperature and bias-voltage dependence of atomic-layer-deposited HfO2-based magnetic tunnel junctions" @default.
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• W2023807566 doi "https://doi.org/10.1063/1.4896994" @default.
• W2023807566 hasPublicationYear "2014" @default.
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