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• W2023808687 abstract "Magnesium aluminate thin films were grown by atomic layer deposition at 100–400 °C onto soda lime glass and Si(100) substrates. (C5H5)2Mg, (CH3)3Al and H2O were used as precursors. Crystallinity and surface morphology of the films were characterized by X-ray diffraction and atomic force microscopy while time-of-flight elastic recoil detection analysis and X-ray fluorescence were used to analyze stoichiometry and possible impurities. As-deposited films were amorphous while films annealed at 800 °C exhibited a strongly (111) oriented spinel structure. Film roughness was found to depend on the pulsing ratio of the precursors. Mg–Al–O films deposited at 100 °C contained 19 at.% of hydrogen and 2.4 at.% of carbon, while films deposited at 300–400 °C contained only 0.7–1.2 at.% of hydrogen and less than 0.1 at.% of carbon." @default.
• W2023808687 created "2016-06-24" @default.
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• W2023808687 date "2004-11-01" @default.
• W2023808687 modified "2023-09-28" @default.
• W2023808687 title "Magnesium aluminate thin films by atomic layer deposition from organometallic precursors and water" @default.
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• W2023808687 doi "https://doi.org/10.1016/j.tsf.2004.02.078" @default.
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