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- W2023843892 abstract "Abstract The growth of GaNP using laser-assisted metalorganic chemical-vapor deposition (LA-MOCVD) was carried out for the fabrication of a light-emitting diode (LED). We used an Ar–F laser in order to decompose the source gases at lower temperature. Trimethylgallium (TMG), ammonia (NH 3 ) and tertiarybuthylphosphine (TBP) were used for the growth. GaNP growth was carried out at different temperatures. As a result, nitride-rich (N-rich) GaN 1− x P x could be grown at 850–950°C. The surface morphologies of GaNP were improved when the growth temperature was increased to above 900°C. We investigated the photoluminescence (PL) of GaNP at 77 K. The peak of band-edge emission shifted to about 0.2 eV compared with the GaN band-edge emission. The effect of laser irradiation during growth was investigated using a PL measurement. In the case of using laser irradiation, the band-edge emission of GaN 1− x P x was enhanced compared with the case of using no laser irradiation. Furthermore, a GaNP single quantum well (SQW) blue–violet LED was fabricated and the electroluminescence (EL) spectra were investigated. The bright band-edge emission at 425 nm was observed." @default.
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- W2023843892 date "2002-04-01" @default.
- W2023843892 modified "2023-09-27" @default.
- W2023843892 title "Crystal growth of nitride-rich GaNP by laser-assisted metalorganic chemical-vapor deposition" @default.
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- W2023843892 doi "https://doi.org/10.1016/s0022-0248(01)02123-6" @default.
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