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• W2023845088 endingPage "151" @default.
• W2023845088 startingPage "143" @default.
• W2023845088 abstract "The requirement to form localized rear metal contact regions for higher silicon solar cell efficiencies places demand on patterning techniques in terms of the small size of the openings and the ability to perform the patterning at commercial wafer processing rates. We suggest here the possibility of using a self-patterning approach which offers the potential of enhanced surface passivation and nanoscale patterning achieved using a single electrochemical anodization process. It is shown that when nanoporous anodic aluminum oxide (AAO) layers are formed by anodizing an aluminum layer over an intervening SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> or SiN <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</i> dielectric layer, the implied open-circuit voltages of p-type silicon test structures can be increased by an average of 40 and 47 mV, respectively. Capacitance-voltage measurements show that these passivating AAO dielectric stack layers store positive charges, which differs from what is observed for Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> layers deposited by plasma-enhanced chemical vapor deposition or atomic layer deposition. Furthermore, we show that the magnitude of the stored charge in the dielectric stacks depends on the anodization conditions, highlighting the possibility of controlling the charge storage properties of these layers for specific cell requirements. Although the passivating properties of the anodized aluminum layer appear to be strongly influenced by charge effects, it is also possible that hydrogenation effects may play a role as has been previously observed for other electrochemical processes, such as metal plating." @default.
• W2023845088 created "2016-06-24" @default.
• W2023845088 creator A5005864642 @default.
• W2023845088 creator A5016480136 @default.
• W2023845088 creator A5019612445 @default.
• W2023845088 creator A5031474857 @default.
• W2023845088 creator A5040454158 @default.
• W2023845088 date "2013-01-01" @default.
• W2023845088 modified "2023-10-16" @default.
• W2023845088 title "Anodic Aluminum Oxide Passivation For Silicon Solar Cells" @default.
• W2023845088 cites W1655635229 @default.
• W2023845088 cites W1970202597 @default.
• W2023845088 cites W1977053792 @default.
• W2023845088 cites W1987119121 @default.
• W2023845088 cites W1998278560 @default.
• W2023845088 cites W2002246880 @default.
• W2023845088 cites W2004423132 @default.
• W2023845088 cites W2010262637 @default.
• W2023845088 cites W2018178435 @default.
• W2023845088 cites W2061978769 @default.
• W2023845088 cites W2067113571 @default.
• W2023845088 cites W2073166239 @default.
• W2023845088 cites W2079478492 @default.
• W2023845088 cites W2089462506 @default.
• W2023845088 cites W2118161878 @default.
• W2023845088 cites W2118725784 @default.
• W2023845088 cites W2130245903 @default.
• W2023845088 cites W2130488690 @default.
• W2023845088 cites W2135796605 @default.
• W2023845088 cites W2138919245 @default.
• W2023845088 cites W2143072563 @default.
• W2023845088 cites W2150502032 @default.
• W2023845088 cites W2153332554 @default.
• W2023845088 cites W2154027555 @default.
• W2023845088 cites W2159496500 @default.
• W2023845088 cites W2160724514 @default.
• W2023845088 cites W2163613573 @default.
• W2023845088 cites W276387193 @default.
• W2023845088 doi "https://doi.org/10.1109/jphotov.2012.2214377" @default.
• W2023845088 hasPublicationYear "2013" @default.
• W2023845088 type Work @default.
• W2023845088 sameAs 2023845088 @default.
• W2023845088 citedByCount "25" @default.
• W2023845088 countsByYear W20238450882013 @default.
• W2023845088 countsByYear W20238450882014 @default.
• W2023845088 countsByYear W20238450882015 @default.
• W2023845088 countsByYear W20238450882016 @default.
• W2023845088 countsByYear W20238450882017 @default.
• W2023845088 countsByYear W20238450882022 @default.
• W2023845088 crossrefType "journal-article" @default.
• W2023845088 hasAuthorship W2023845088A5005864642 @default.
• W2023845088 hasAuthorship W2023845088A5016480136 @default.
• W2023845088 hasAuthorship W2023845088A5019612445 @default.
• W2023845088 hasAuthorship W2023845088A5031474857 @default.
• W2023845088 hasAuthorship W2023845088A5040454158 @default.
• W2023845088 hasConcept C113196181 @default.
• W2023845088 hasConcept C133386390 @default.
• W2023845088 hasConcept C160671074 @default.
• W2023845088 hasConcept C171250308 @default.
• W2023845088 hasConcept C178790620 @default.
• W2023845088 hasConcept C185592680 @default.
• W2023845088 hasConcept C191897082 @default.
• W2023845088 hasConcept C192562407 @default.
• W2023845088 hasConcept C22016385 @default.
• W2023845088 hasConcept C2779227376 @default.
• W2023845088 hasConcept C2779851234 @default.
• W2023845088 hasConcept C33574316 @default.
• W2023845088 hasConcept C48940184 @default.
• W2023845088 hasConcept C49040817 @default.
• W2023845088 hasConcept C513153333 @default.
• W2023845088 hasConcept C544956773 @default.
• W2023845088 hasConcept C57410435 @default.
• W2023845088 hasConceptScore W2023845088C113196181 @default.
• W2023845088 hasConceptScore W2023845088C133386390 @default.
• W2023845088 hasConceptScore W2023845088C160671074 @default.
• W2023845088 hasConceptScore W2023845088C171250308 @default.
• W2023845088 hasConceptScore W2023845088C178790620 @default.
• W2023845088 hasConceptScore W2023845088C185592680 @default.
• W2023845088 hasConceptScore W2023845088C191897082 @default.
• W2023845088 hasConceptScore W2023845088C192562407 @default.
• W2023845088 hasConceptScore W2023845088C22016385 @default.
• W2023845088 hasConceptScore W2023845088C2779227376 @default.
• W2023845088 hasConceptScore W2023845088C2779851234 @default.
• W2023845088 hasConceptScore W2023845088C33574316 @default.
• W2023845088 hasConceptScore W2023845088C48940184 @default.
• W2023845088 hasConceptScore W2023845088C49040817 @default.
• W2023845088 hasConceptScore W2023845088C513153333 @default.
• W2023845088 hasConceptScore W2023845088C544956773 @default.
• W2023845088 hasConceptScore W2023845088C57410435 @default.
• W2023845088 hasIssue "1" @default.
• W2023845088 hasLocation W20238450881 @default.
• W2023845088 hasOpenAccess W2023845088 @default.
• W2023845088 hasPrimaryLocation W20238450881 @default.
• W2023845088 hasRelatedWork W1578338700 @default.
• W2023845088 hasRelatedWork W1966496193 @default.
• W2023845088 hasRelatedWork W2049213869 @default.
• W2023845088 hasRelatedWork W2104253413 @default.
• W2023845088 hasRelatedWork W2155500061 @default.

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