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- W2023851943 abstract "In situ LEED studies of the homoepitaxial growth of Si(111) films by uhv sublimation, indicate a strong correlation between the type of surface structure generated and the metallic impurity content of the silicon substrates as estimated from minority carrier lifetimes. The development of the familiar Si (111)−7 × 7 structure is favored by the presence of lifetime-killing impurities in the substrate. Experiments where Fe is introduced on high lifetime substrates prior to annealing and film growth, suggest that this impurity species plays a role in the generation of the 7 × 7 surface structure. Electron microscopy reveals that homoepitaxial Si(111) layers are generally faulted, the number density of which increases progressively as the growth temperature is lowered and the deposition rate increased. Films deposited on high lifetime silicon contain substantially fewer stacking faults than those grown on low lifetime substrates. These results suggest that the faults originate at the substrate surface at microprecipitates consisting of fast diffusing, low solubility impurity species." @default.
- W2023851943 created "2016-06-24" @default.
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- W2023851943 date "1971-04-01" @default.
- W2023851943 modified "2023-09-26" @default.
- W2023851943 title "Influence of impurities on the surface structures and fault generation in homoepitaxial Si (111) films" @default.
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- W2023851943 doi "https://doi.org/10.1016/0039-6028(71)90257-3" @default.
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