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- W2023863403 abstract "Ion implantation's unique contributions to FET processing are excellent uniformity and repeatability at low dose. These could be verified on product wafers but were difficult to measure on monitor wafers. This paper presents an MOS technique that integrates the CV curve directly to obtain part of the implanted dose — the partial dose. This technique is fast and insensitive to measurement noise and dot-diameter variation. It uses standard MOS wafers and processing. Neither photo-defined dots nor special substrates are required. Presently the integral CdV technique for partial dose is used in several FET lines to measure both implant repeatability and uniformity." @default.
- W2023863403 created "2016-06-24" @default.
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- W2023863403 date "1985-01-01" @default.
- W2023863403 modified "2023-10-14" @default.
- W2023863403 title "CV Uniformity measurements" @default.
- W2023863403 cites W2081334038 @default.
- W2023863403 doi "https://doi.org/10.1016/0168-583x(85)90656-1" @default.
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