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- W2023879942 abstract "The spectral dependence of photoconductivity has been measured on amorphous Ge and Si films over a broad range of deposition conditions and after various annealing treatments. As with measurements of other properties, the results demonstrate the non-uniqueness of the “amorphous” state obtained from vacuum deposition. Most of the increase of Δσ/σ with annealing is due to a decrease in σ; the mobility-lifetime product (contained in Δσ) is relatively unaffected. The magnitude of Δσ/σ suggests further development of these materials toward practical applications; the best Si films exhibit Δσ/σ ∼ 100 at 80° K with about 3 mW power incident on a 1 mm × 10 mm area. Photovoltaic effects with submicrosecond response have been observed at room temperature on annealed Si with Ni and Cr sandwich electrodes. Some possible applications of these films are suggested." @default.
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- W2023879942 date "1973-08-01" @default.
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- W2023879942 title "Photoelectric properties of amorphous silicon and germanium films" @default.
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- W2023879942 doi "https://doi.org/10.1016/0040-6090(73)90130-2" @default.
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