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- W2023882444 abstract "Ultrathin films of ZrO2 have been grown on r-cut sapphire [α-Al2O3(101̄2)] substrates in the temperature range 50 °C<T<650 °C via electron beam evaporation of Zr in the presence of an oxygen plasma generated by an electron cyclotron resonance source. Reflection high-energy electron diffraction observations during deposition above 475 °C at growth rates of 0.5 Å/s indicate that an epitaxial cubic ZrO2 phase grows without the addition of stabilizing dopants. The epitaxial orientation is (001)c-ZrO2∥(101̄2)r-sapphire with [100]c-ZrO2∥[12̄10]r-sapphire. Above a critical thickness of 40 nm, monoclinic phase ZrO2 nucleates and coexists with the cubic ZrO2 phase. At faster growth rates (above 2 Å/s), epitaxial single phase monoclinic ZrO2 is produced with the same epitaxial orientation as the cubic phase. For deposition below 250 °C, the ZrO2 films are amorphous. All of these films are stoichiometric ZrO2 as measured by x-ray photoelectron spectroscopy." @default.
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- W2023882444 date "1997-05-01" @default.
- W2023882444 modified "2023-09-26" @default.
- W2023882444 title "Properties of ZrO2 films on sapphire prepared by electron cyclotron resonance oxygen-plasma-assisted deposition" @default.
- W2023882444 doi "https://doi.org/10.1116/1.580595" @default.
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