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• W2023883235 abstract "Low-temperature photoluminescence spectrum of the transition metal Cr-doped GaN (GaCrN) shows unusual high-intensity emission lines at 3.365 and 3.311 eV. The spectrum also contains a weak neutral donor bound excitonic transition of wurtzite GaN at 3.47 eV, free excitonic transition of GaCrN at 3.29 eV, and two low-intensity lines at 3.24 and 3.17 eV. From our investigations, we attribute these high-intensity lines to the stacking faults which can bind excitons and are due to the coexistence of wurtzite and zinc blende phases of GaN. The 3.24 and 3.17 eV lines are interpreted as phonon replica lines of the 3.31 eV emission line." @default.
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• W2023883235 date "2005-02-23" @default.
• W2023883235 modified "2023-09-26" @default.
• W2023883235 title "Strongly localized exciton luminescence in Cr-doped GaN" @default.
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• W2023883235 doi "https://doi.org/10.1063/1.1871365" @default.
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