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- W2023891401 abstract "Abstract Ohmic contacts to p-type CuCrO 2 using Ni/Au/CrB 2 /Ti/Au contact metallurgy are reported. The samples were annealed in the 200–700 °C range for 60 s in flowing oxygen ambient. A minimum specific contact resistance of ∼2 × 10 −5 Ω cm 2 was obtained after annealing at 400 °C. Further increase in the annealing temperature (>400 °C) resulted in the degradation of contact resistance. Auger Electron Spectroscopy (AES) depth profiling showed that out-diffusion of Ti to the surface of the contact stacks was evident by 400 °C, followed by Cr at higher temperature. The CrB 2 diffusion barrier decreases the specific contact resistance by almost two orders of magnitude relative to Ni/Au alone." @default.
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- W2023891401 date "2008-06-01" @default.
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- W2023891401 title "RF-sputtered CrB2 diffusion barrier for Ni/Au Ohmic contacts on p-CuCrO2" @default.
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- W2023891401 doi "https://doi.org/10.1016/j.apsusc.2008.02.028" @default.
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