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- W2023896221 abstract "Silicon ions were implanted into the films of silicon oxide obtained by thermal oxidation of silicon wafers in a damp oxygen. Accumulation of the implantation dose was performed either in one step or cyclically in step-by-step mode, and after each stage of implantation the samples were annealed in a dry nitrogen. The second series of the samples differed from the first one by the formation of SiO 2 matrix that included additional annealing in the air at 1100 °C for 3 h before ion implantation. X-ray absorption near edge structure (XANES) was obtained with the use of synchrotron radiation. Two absorption edges were observed in all of Si L 2 , 3 -spectra. One of them is related to elementary silicon while the other one-to silicon in SiO 2 . The fine structure of the first one indicates the formation of nanocrystalline silicon nc-Si in SiO 2 matrix. Its atomic and electron structure depends on the technology of formation. For both series of samples, a cyclical accumulation of the total dose Φ = 10 17 cm- 2 (for the total time of annealing-2h) resulted in the appearance of more distinct structure in the range of absorption edge for the elementary silicon as compared with the case of single-step accumulation dose. In the more dense oxide of the samples from the second series, the probability of formation of silicon nanocrystals in a thin near-surface region of the implanted layer was reduced. These results can be interpreted with the account of the previously obtained photoluminescence, Raman scattering and electron microscopy data for these samples." @default.
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- W2023896221 date "2007-04-01" @default.
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- W2023896221 title "Silicon nanocrystals in SiO2 matrix obtained by ion implantation under cyclic dose accumulation" @default.
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- W2023896221 doi "https://doi.org/10.1016/j.physe.2006.12.030" @default.
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