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- W2023896370 abstract "Abstract The r.f. diode sputtering ZnO films using an Ar and O2 gas mixture has been studied as a function of the O2 content in the sputtering gas. ZnO films are deposited onto both elemental Si substrates and those with the configuration Si-SiO2TiN. Non-stoichiometric ZnO films are deposited by the r.f. sputtering of a ZnO target in pure Ar gas and the film resistivity (ϱ = 0.1 – 10 Ω cm) is particularly determined by the carrier concentration (n = 1018–1019 cm−3). The highly ordered films with a preferential (002) orientation of their fibre grains are deposited in sputtering gas containing over 50% oxygen at a substrate temperature of 300 °C. The reactively sputtered ZnO films are optically clear (transparence 80–90%) with a band gap of 3.22 eV." @default.
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- W2023896370 date "1992-01-01" @default.
- W2023896370 modified "2023-10-17" @default.
- W2023896370 title "R.f. reactive sputtering of zinc oxide films on silicon and SiSiO2TiN substrates" @default.
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- W2023896370 doi "https://doi.org/10.1016/0924-4247(92)80206-i" @default.
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