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W2023897843 abstract "A non-contact method for measurement of sheet resistance and leakage current (RsL) for ultra-shallow junction (USJ) characterization is described based on analysis of frequency-dependent junction photovoltages from p-n junctions . Theoretical, device-simulated and measured photovoltages, sheet resistance as well as RsL and reverse-biased diode currents are compared. The linkage between RsL recombination currents and end-of-range implant damage in USJ/halo profiles and deletion layers is described. The addition of a Halo profile to a USJ results in increased in sheet resistance and leakage current due to changes in the junction depth and depletion layer conditions. Measured recombination leakage currents for implanted and CVD-grown USJs are compared with calculation and show good agreement." @default.
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W2023897843 date "2007-09-28" @default.
W2023897843 modified "2023-09-26" @default.
W2023897843 title "Junction Photovoltage (JPV) Techniques for Ultra-Shallow Junction Characterization" @default.
W2023897843 doi "https://doi.org/10.1149/1.2778656" @default.
W2023897843 hasPublicationYear "2007" @default.
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