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- W2023951819 abstract "A short survey of MeV ion implantation (I/I) is given. In the first part, we present measurements of ion ranges and profiles, the damage induced by high energy deposition, material modifications, and the annealing behavior. The second section presents device improvements or fabrication by high energy I/I: waveguides, cosmic ray simulation, SOI isolation, thyristors, magnetic bubbles, latch up and SEU prevention, ion lithography, retrograde p-wells and collectors, gridistors and PROM customization. The last part deals with technical problems: availability, costs, and handling." @default.
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- W2023951819 date "1988-05-01" @default.
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- W2023951819 title "Application of high energy implantation in semiconductors" @default.
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- W2023951819 doi "https://doi.org/10.1016/0168-9002(88)90581-5" @default.
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