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- W2023962916 abstract "We report a systematic study of small-angle x-ray scattering and Raman spectroscopy on hydrogen-implanted amorphous silicon $(aensuremath{-}mathrm{Si})$ and standard device-quality plasma-grown $aensuremath{-}mathrm{S}mathrm{i}:mathrm{H},$ both having a hydrogen concentration of 11 at. %. The modifications of short-range and medium-range structural order induced by annealing are investigated. We find that annealing causes the formation and growth of nanoscale H complexes in both materials. However, the volume content of the H nanoclusters is strongly influenced by the disorder in the original structure, remaining smaller by a factor of 3 in the $aensuremath{-}mathrm{S}mathrm{i}:mathrm{H}$ with respect to the H-implanted sample. We discuss qualitative resemblances and quantitative differences of the structural evolution of H-implanted $aensuremath{-}mathrm{Si}$ and $aensuremath{-}mathrm{S}mathrm{i}:mathrm{H}$ in terms of H solubility and defect structure in $aensuremath{-}mathrm{Si}.$ In addition, the study of $aensuremath{-}mathrm{Si}$ implanted with H at different concentrations shows that the amount of H nanoclustering increases superlinearly with the concentration of H atoms exceeding solubility." @default.
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- W2023962916 date "1998-11-15" @default.
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- W2023962916 title "Nanoclustering of hydrogen in ion-implanted and plasma-grown amorphous silicon" @default.
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- W2023962916 doi "https://doi.org/10.1103/physrevb.58.12853" @default.
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