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- W2023991170 abstract "Abstract High quality AlxGa1−xAs/GaAs single quantum wells have been grown successfully on (311)A and (311)B Si-doped GaAs substrates by molecular beam epitaxy (MBE) at 600 °C and 650 °C. Photoluminescence (PL) spectra of these samples are measured at 1.8 K. The calculations of the PL peak energies agree with those of experiments, suggesting that the conduction band offset at the interface between AlxGa1−xAs and GaAs is 65% and that the electron effective mass in both AlxGa1−xAs and GaAs in growth temperature on (311)A and (311)B substrates is discussed. We find that the surface of GaAs in (311)B can capture impurities more easily than that in (311)A." @default.
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- W2023991170 date "1994-10-01" @default.
- W2023991170 modified "2023-10-16" @default.
- W2023991170 title "The investigation of growth characteristics of single quantum wells grown on (311) GaAs substrates" @default.
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- W2023991170 doi "https://doi.org/10.1016/0921-5107(94)90146-5" @default.
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