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• W2024013855 abstract "Ion photostimulated desorption (PSD) is a specific surface sensitive process. This paper reviews ion PSD following core level excitation of molecules adsorbed on the Si(111) 7 × 7 and Si(100) 2 × 1 surfaces. Several aspects of ion PSD will be discussed; (i) the use of ion PSD as a tool for investigating the adsorption configurations of O2 on Si(111) 7 × 7, (ii) the relevance of ion PSD for probing the physisorption–chemisorption transition of benzene molecules on Si(111), (iii) the comparison between ion PSD of methanol adsorbed on Si(111) and photofragmentation of the methanol molecule in the gas phase, (iv) the comparison between ion PSD of formic acid adsorbed on the Si(111) and Si(100) surfaces and (v) the chemical selectivity of ion PSD following core level excitation of NO dissociatively adsorbed on Si(111). Finally, the interplay between ion dynamics and electronic relaxation following core level excitation and Auger processes will be discussed in the case of O+ photodesorption from O2 adsorbed on Si(111) 7 × 7, as investigated via isotope and temperature effects on both the intensities and kinetic energies of the desorbed ions." @default.
• W2024013855 created "2016-06-24" @default.
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• W2024013855 date "2006-07-14" @default.
• W2024013855 modified "2023-09-25" @default.
• W2024013855 title "Ion photostimulated desorption as a tool for investigating adsorption and electronic excitation of molecules on semiconductor surfaces" @default.
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• W2024013855 doi "https://doi.org/10.1088/0953-8984/18/30/s06" @default.
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