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• W2024018529 abstract "We demonstrate that ultrashallow high-concentration phosphorus profiles in silicon diffuse preferentially toward the surface during low-temperature annealing at 700°C after recrystallization of an amorphous layer. In this work, we observe the preferential diffusion following a preamorphizing germanium implant, and also after a self-amorphizing phosphorus implant. This phenomenon is driven by the presence and dissolution of silicon interstitial defects. The greater the distance between the defect band and the high-concentration phosphorus profile, the less the preferential diffusion for a fixed anneal time. The overall result of this effect is a phosphorus profile that is significantly shallower and steeper than after implant." @default.
• W2024018529 created "2016-06-24" @default.
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• W2024018529 date "2005-02-18" @default.
• W2024018529 modified "2023-10-01" @default.
• W2024018529 title "Low-temperature diffusion of high-concentration phosphorus in silicon, a preferential movement toward the surface" @default.
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• W2024018529 doi "https://doi.org/10.1063/1.1869540" @default.
• W2024018529 hasPublicationYear "2005" @default.
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