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• W2024019811 abstract "The Inverse Piezoelectric Effect (IPE) is thought to contribute to possible device failure of GaN High Electron Mobility Transistors (HEMTs). Here we focus on a simulation study to probe the possible mitigation of the IPE by reducing the internal electric fields and related elastic energy through the use of high-k materials. Inclusion of a HfO2 “cap layer” above the AlGaN barrier particularly with a partial mesa structure is shown to have potential advantages. Simulations reveal even greater reductions in the internal electric fields by using “field plates” in concert with high-k oxides." @default.
• W2024019811 created "2016-06-24" @default.
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• W2024019811 date "2015-01-01" @default.
• W2024019811 modified "2023-09-23" @default.
• W2024019811 title "Simulation study of HEMT structures with HfO2 cap layer for mitigating inverse piezoelectric effect related device failures" @default.
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• W2024019811 doi "https://doi.org/10.1063/1.4905702" @default.
• W2024019811 hasPublicationYear "2015" @default.
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