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- W2024028100 abstract "Abstract Interaction of GaN crystal faces with chemicals is crucial to understand why various nanostructures are formed during the etching process. We have prepared GaN nanostructures by a photo-assisted electroless chemical etching method in solutions containing KOH and K 2 S 2 O 8 . Morphology nanostructure GaN layers grown by molecular beam epitaxy (MBE) and hydride vapor phase epitaxy (HVPE) were studied. For the GaN layers grown by MBE, the etching reaction process starts at grain boundaries and dislocation domains on the surface and inverted hexagonal pyramids are eventually formed. For the GaN layers grown by HVPE, scattered etch pits with well-defined hexagonal facets are observed after the etching process." @default.
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- W2024028100 date "2010-11-01" @default.
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- W2024028100 title "Formation of GaN nanostructures with various morphologies by photo-assisted electroless chemical etching" @default.
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- W2024028100 doi "https://doi.org/10.1016/j.matlet.2010.07.057" @default.
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