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• W2024062226 startingPage "G221" @default.
• W2024062226 abstract "We studied the effects of the thickness variation of the chemical oxide interfacial layer (IL) on the interfacial quality of the system in this paper. Metal-oxide-semiconductor (MOS) capacitors using the gate oxide stack were fabricated using the Ni/Ti metal gate. The capacitance–voltage and ellipsometry measurements suggest that the chemical oxide interfacial layer of is the minimum requirement for atomic layer deposition growth of high quality on silicon and thicker chemical oxide ILs result in better interfaces for MOS structures with equivalent oxide thicknesses of ." @default.
• W2024062226 created "2016-06-24" @default.
• W2024062226 creator A5065712767 @default.
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• W2024062226 date "2010-01-01" @default.
• W2024062226 modified "2023-09-27" @default.
• W2024062226 title "The Interfacial Quality of HfO[sub 2] on Silicon with Different Thicknesses of the Chemical Oxide Interfacial Layer" @default.
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• W2024062226 doi "https://doi.org/10.1149/1.3483789" @default.
• W2024062226 hasPublicationYear "2010" @default.
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