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• W2024093693 abstract "Abstract A layer of nanocrystalline 3C–SiC film was synthesized on silicon nanoporous pillar array (Si-NPA) by thermally carbonizing the surface of Si-NPA in a graphite crucible and a 3C–SiC/Si nanoheterojunction (named SiC/Si-NPA) was fabricated. Room-temperature photoluminescence of SiC/Si-NPA was studied and strong light emissions peaked at 383, 402 and 420 nm were observed from SiC/Si-NPA when it was excited by 300 nm fluorescent light. The I – V characteristics of SiC/Si-NPA were measured. Obvious rectification behavior and low leakage current were found in the prepared SiC/Si-NPA diodes. Based on the I – V measurements the conduction mechanism in SiC/Si-NPA under positive applied voltage was explained. Our results indicate that SiC/Si-NPA might be a valuable heterostructure nanosystem to be further probed for achieving enhanced optical and electrical properties." @default.
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• W2024093693 date "2013-05-01" @default.
• W2024093693 modified "2023-10-17" @default.
• W2024093693 title "Photoluminescence and I–V characteristics of the carbonized silicon nanoporous pillar array" @default.
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• W2024093693 doi "https://doi.org/10.1016/j.apsusc.2013.02.020" @default.
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