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• W2024100827 abstract "Optical properties of the InGaN/(In)GaN light-emitting diodes (LEDs) with varied barrier materials and quantum-well (QW) numbers are studied numerically. The simulation results show that, for the LEDs with GaN barriers, the single quantum-well (SQW) structure has the best optical performance. However, for the LEDs with InGaN barriers, the 5-QW structure has less serious efficiency droop and higher output power at high current than the SQW one, which makes it a better structure for high-power LEDs. The physical mechanisms of the aforementioned phenomena can be well explained by uniformity of carrier distribution, band-filling effect, and overlap between the electron and hole wavefunctions." @default.
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• W2024100827 date "2010-12-07" @default.
• W2024100827 modified "2023-10-18" @default.
• W2024100827 title "Correlation of barrier material and quantum-well number for InGaN/(In)GaN blue light-emitting diodes" @default.
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• W2024100827 doi "https://doi.org/10.1002/pssa.201026369" @default.
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