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- W2024100855 abstract "Wide bandgap semiconducting materials are promising candidates for high-power, high-temperature, microwave and optoelectronic devices because of their superior thermal and electrical properties in comparison to conventional semiconductors. Recent developments in SiC and GaN materials and processing have enabled the demonstration of semiconductor devices with dramatically improved performance. Examples of these developments and new wide bandgap devices are presented." @default.
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- W2024100855 date "1999-08-01" @default.
- W2024100855 modified "2023-10-03" @default.
- W2024100855 title "SiC and GaN wide bandgap semiconductor materials and devices" @default.
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- W2024100855 doi "https://doi.org/10.1016/s0038-1101(99)00089-1" @default.
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