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• W2024129807 abstract "Using contact photolithography and electron-beam lithography techniques, we manufactured copper phthalocyanine thin-film devices with active areas ranging from 1,000,000 to 0.04 µm2 to investigate how much current can flow through these devices with the aim of fabricating electrically pumped organic laser diodes. From the results of our current density–voltage (J–V) measurements, we found that the device with the smallest active area of 0.04 µm2 on a silicon substrate exhibits an extremely high current density of 6,350,000 A/cm2 due to improved thermal management. The J–V characteristics of the devices are controlled by shallow-trap space-charge-limited current (SCLC), trap-free SCLC, and two-carrier injection current mechanisms over a wide range of current densities between nA/cm2 and MA/cm2." @default.
• W2024129807 created "2016-06-24" @default.
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• W2024129807 date "2007-11-30" @default.
• W2024129807 modified "2023-10-16" @default.
• W2024129807 title "Observation of Extremely High Current Densities on Order of MA/cm²in Copper Phthalocyanine Thin-Film Devices with Submicron Active Areas" @default.
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• W2024129807 doi "https://doi.org/10.1143/jjap.46.l1179" @default.
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