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- W2024184426 abstract "A series of quaternary-diluted magnetic semiconductors, (In1−yAly)1−xMnxAs, have been successfully grown on InP substrates by low-temperature molecular beam epitaxy. The (In0.52Al0.48)1−xMnxAs with x⩽0.11 were grown on a nearly lattice-matched In0.52Al0.48As buffer, while the (In1−yAly)1−xMnxAs with a higher Mn content of 0.11<x⩽0.18 were grown on a graded 3-layer In1−yAlyAs buffer structure. The results of transmission electron microscopy and double-crystal X-ray diffraction reveal that all (In1−yAly)1−xMnxAs epilayers are single crystal with zincblende structure, and the lattice constant increases with increasing the Mn content. The magnetic measurements show that the (In1−yAly)1−xMnxAs semiconductors exhibit a paramagnetic-like state for x⩽0.05 while a ferromagnetic state for x>0.05, and the Curie temperature of ferromagnetic (In1−yAly)1−xMnxAs increases with increasing Mn content." @default.
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- W2024184426 date "2006-04-01" @default.
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- W2024184426 title "MBE growth and structural and magnetic properties of (In1−yAly)1−xMnxAs-diluted magnetic semiconductors" @default.
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- W2024184426 doi "https://doi.org/10.1016/j.jcrysgro.2005.12.085" @default.
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