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- W2024192956 abstract "We have grown MnxGe1−x films (x=0, 0.06, 0.1) on Si (001) substrates by magnetron cosputtering, and have explored the resulting structural, morphological, electrical and magnetic properties. X-ray diffraction results show there is no secondary phase except Ge in the Mn0.06Ge0.94 film while new phase appears in the Mn0.1Ge0.9 film. Nanocrystals are formed in the Mn0.06Ge0.94 film, determined by field-emission scanning electron microscopy. Hall measurement indicates that the Mn0.06Ge0.94 film is p-type semiconductor and hole carrier concentration is 6.07×1019 cm−3 while the MnxGe1−x films with x=0 has n-type carriers. The field dependence of magnetization was measured using alternating gradient magnetometer, and it has been indicated that the Mn0.06Ge0.94 film is ferromagnetic at room temperature." @default.
- W2024192956 created "2016-06-24" @default.
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- W2024192956 date "2006-01-01" @default.
- W2024192956 modified "2023-09-26" @default.
- W2024192956 title "Growth and properties of magnetron cosputtering grown MnxGe1−x on Si (001)" @default.
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- W2024192956 doi "https://doi.org/10.1016/j.ssc.2005.11.008" @default.
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