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- W2024194809 abstract "High quality pseudomorphic Si1 − x − yGexCy alloy layers were grown on (100) silicon substrates by rapid thermal chemical vapor deposition with 0 or 11 at% Ge and 0.5 or 1 at% C. The relaxation behavior of these strained layers was investigated using rapid thermal annealing between 1000 and 1130°C. Substitutional C gradually precipitated out to form cubic silicon carbide (β-SiC). The in-plane lattice constant remained constant after annealing, indicating that there was no mechanical strain relaxation by misfit dislocations. The perpendicular lattice constant increased due to the decreasing substitutional C concentration. The same behavior was observed for both SiC and SiGeC samples, showing that Ge did not influence C precipitation. C atoms diffused over very short distances before they precipitated. It appears that, once formed, the β-SiC particles stayed put. Germanium out-diffusion was found to be somewhat higher than calculated with published diffusion coefficients." @default.
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- W2024194809 date "1995-12-01" @default.
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- W2024194809 title "Thermal stability of Si/Si1 − x − yGexCy/Si heterostructures grown by rapid thermal chemical vapor deposition" @default.
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- W2024194809 doi "https://doi.org/10.1016/0022-0248(95)00334-7" @default.
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