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- W2024224444 abstract "This work discusses the influence of the underlying SiGe on the growth kinetics during the deposition of the Si-cap layer. The importance and feasibility of the required process control is demonstrated by charge pumping measurements and energy dispersive X-ray spectroscopy (EDX) on pMOS devices. The analysis clearly demonstrates the influence of the Si thickness on the quality of the gate dielectric/channel interface. We also discuss the presence of thermal loading effects, by comparing the growth behavior with and without Si recess prior to the SEG" @default.
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- W2024224444 date "2006-01-01" @default.
- W2024224444 modified "2023-10-14" @default.
- W2024224444 title "Selective Epitaxial Si/SiGe for VT Shift Adjustment in High k pMOS Devices" @default.
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- W2024224444 doi "https://doi.org/10.1109/istdm.2006.246518" @default.
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