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• W2024254155 abstract "The electrostatic discharge (ESD) mechanism in dual-in-line package (DIP) and small outline J-lead (SOJ) semiconductor devices was investigated by examining the discharge waveforms generated in fixed gap discharge (FGD) tests as well as in approaching discharge (AD) tests. The discharge probe, after the FGD and AD tests, was examined by a Scanning Electron Microscope for ESD damage. The results of our study can be summarized as follows: (1) the breakdown voltage for the packaged semiconductor devices agrees with the Townsend model for air breakdown; (2) the general features of the discharge waveforms for the FGD tests are similar to those of the AD tests; (3) only nanosecond impulse (non-oscillatory) discharge waveforms are detected for all voltages (from 50 volts to 3000 volts); and (4) the micron-size pits, similar to those previously reported in the study of low voltage (less than 300 volts) discharges between close electrodes in air, are observed on the surface of our discharge probe. Based on these results, we conclude that the electrostatic discharges to the packaged semiconductor devices must occur through an air gap for all voltages and not through physical contact as is often suggested in discussions of Charged Device Model (CDM)." @default.
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• W2024254155 date "1994-01-01" @default.
• W2024254155 modified "2023-09-27" @default.
• W2024254155 title "An experimental investigation of the electrostatic discharge (ESD) mechanism in packaged semiconductor devices" @default.
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• W2024254155 doi "https://doi.org/10.1016/0304-3886(94)90028-0" @default.
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