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• W2024258546 abstract "Graphene-on-silicon Schottky junction solar cells were prepared with pillar-array-patterned silicon substrate. Such patterned substrate showed an anti-reflective characteristic and led to an absorption enhancement of the solar cell, which showed enhanced performance with short-circuit current density, open-circuit voltage, fill factor, and energy conversion efficiency of 464.86 mV, 14.58 mA/cm2, 0.29, and 1.96%, respectively. Nitric acid was used to dope graphene film and the cell performance showed a great improvement with efficiency increasing to 3.55%. This is due to the p-type chemical doping effect of HNO3 which increases the work function and the carrier density of graphene." @default.
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• W2024258546 date "2011-12-05" @default.
• W2024258546 modified "2023-10-10" @default.
• W2024258546 title "Graphene based Schottky junction solar cells on patterned silicon-pillar-array substrate" @default.
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• W2024258546 doi "https://doi.org/10.1063/1.3665404" @default.
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