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• W2024295230 abstract "Si-Sb4Te phase change thin films with different silicon contents have been investigated by in situ heating technique in transmission electron microscopy (TEM). The studies show that Si-doping can significantly improve the thermal stability of Si-Sb4Te thin films, refine their grain size, and change the nucleation characters with the increase of silicon content. By in situ annealing in TEM, the crystalline phase of Si-Sb4Te thin films can be indexed as hexagonal Sb structure, and Si is still holding amorphous state which is considered as the reason for the change, by destroying the long-range order lattice of crystal grains." @default.
• W2024295230 created "2016-06-24" @default.
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• W2024295230 date "2011-12-26" @default.
• W2024295230 modified "2023-09-25" @default.
• W2024295230 title "Influence of silicon on the thermally-induced crystallization process of Si-Sb₄Te phase change materials" @default.
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• W2024295230 doi "https://doi.org/10.1063/1.3673281" @default.
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