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• W2024298345 abstract "The passivation of p+ Si surfaces is challenging due to the fact that most passivation films have an intrinsically high positive fixed charge. In this work we show experimentally that low-temperature plasma-enhanced chemical vapor deposited SiOx/SiNy stacks with a low positive fixed charge density (+1011 cm−2) and very low interface defect density (~3×1010 eV−1 cm−2) as measured by contactless corona-voltage measurements can effectively passivate p+ surfaces resulting in emitter saturation current density (J0e) values of 25 and 45 fA/cm2 on planar and textured 75 Ω/sq p+ silicon after industrial firing with a set-temperature of ~800 °C, respectively. Based on contactless corona-voltage measurements and advanced device simulations, we explain the mechanism of surface passivation by PECVD SiOx/SiNy dielectric stack to be completely dominated by chemical passivation rather than field-effect passivation. Furthermore, from advanced device simulations we illustrate the role of fixed charge in surface passivation and in the extraction of fundamental surface recombination velocity parameter for p+ silicon surfaces. The fundamental surface recombination velocity parameter for electrons is determined to be about 400 cm/s at these c-Si/SiOx interfaces. With excellent optical and passivation properties, SiOx/SiNy dielectric stacks are suitable for high-efficiency and cost-effective industrial n-type silicon wafer solar cells." @default.
• W2024298345 created "2016-06-24" @default.
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• W2024298345 date "2014-01-01" @default.
• W2024298345 modified "2023-10-09" @default.
• W2024298345 title "Excellent surface passivation of heavily doped p+ silicon by low-temperature plasma-deposited SiOx/SiNy dielectric stacks with optimised antireflective performance for solar cell application" @default.
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• W2024298345 doi "https://doi.org/10.1016/j.solmat.2013.09.004" @default.
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