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• W2024311939 abstract "physica status solidi (a)Volume 126, Issue 2 p. K99-K103 Short Note The Equilibration Behavior of Defects in Boron Doped Hydrogenated Amorphous Silicon–Carbon Films during the Annealing Process Zhizhong Song, Zhizhong Song Department of Physics, Lanzhou University Search for more papers by this authorFangqing Zhang, Fangqing Zhang Department of Physics, Lanzhou University Search for more papers by this authorLiming Zhao, Liming Zhao Department of Physics, Lanzhou University Search for more papers by this authorYongping Guo, Yongping Guo Department of Physics, Lanzhou University Search for more papers by this authorGuanghua Chen, Guanghua Chen Department of Physics, Lanzhou University Search for more papers by this author Zhizhong Song, Zhizhong Song Department of Physics, Lanzhou University Search for more papers by this authorFangqing Zhang, Fangqing Zhang Department of Physics, Lanzhou University Search for more papers by this authorLiming Zhao, Liming Zhao Department of Physics, Lanzhou University Search for more papers by this authorYongping Guo, Yongping Guo Department of Physics, Lanzhou University Search for more papers by this authorGuanghua Chen, Guanghua Chen Department of Physics, Lanzhou University Search for more papers by this author First published: 16 August 1991 https://doi.org/10.1002/pssa.2211260229 Lanzhou 730001, People's Republic of China. AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat References 1 D. L. Staebler and C. R. Wronski, Appl. Phys. Letters 31, 292 (1977). 2 D. L. Staebler and C. R. Wronski, J. appl. Phys. 51, 3262 (1980). 3 M. Stutzmann, D. K. Biegelsen, and K. A. Street, Phys. Rev. B 35, 5666 (1987). 4 D. V. Lang, J. D. Cohen, and J. P. Harbison, Phys. Rev. Letters 48, 421 (1982). 5 R. A. Street, J. Kakalios, C. C. Tsai, and T. M. Hayes, Phys. Rev. B 35, 1316 (1987). 6 Z. E. Smith, S. Aljishi, D. Slobodin, V. Chu, S. Wagner, P. M. Lexahan, P. R. Arya, and M. S. Bennett, Phys. Rav. Letters 57, 2450 (1986). 7 R. A. Street and K. Wigner, Phys. Rev. B 40, 6236 (1989). 8 X. Xu, A. Okumura, A. Morimoto, M. Kumeda, and T. Shimizu, Phys. Rev. B 38, 8371 (1988). 9 X. Xu, H. Sasaki, A. Morimoto, M. Kumeda, and T. Shimizu, Phys. Rev. B 41, 10049 (1990). Volume126, Issue216 August 1991Pages K99-K103 ReferencesRelatedInformation" @default.
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• W2024311939 title "The Equilibration Behavior of Defects in Boron Doped Hydrogenated Amorphous Silicon–Carbon Films during the Annealing Process" @default.
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