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- W2024331298 abstract "Abstract This paper presents an analytic model for the threshold voltage of small-geometry buried-channel MOSFETs, in which the implanted buried-channel profile is approximated by a step profile. Based on the energy-band diagram, the threshold voltage of a buried-channel MOSFET is derived, in which the flatband voltage is physically defined. Using a new charge-sharing scheme, the threshold-voltage model considering the short-channel effect is calculated analytically. Similarly, based on the charge-sharing scheme, the narrow-width effect considering the field implant encroachment under the bird's beak is calculated. Combining both short-channel and narrow-width effects, the threshold-voltage model for small-geometry buried-channel MOSFETs is developed. In order to test the validity of the model, the buried-channel MOSFETs were fabricated in a production line and the threshold voltages were measured. Comparisons between the measured threshold voltage and the present model have been made. It is shown that satisfactory agreement has been obtained for wide ranges of channel lengths, channel widths and applied back-gate biases." @default.
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- W2024331298 modified "2023-09-30" @default.
- W2024331298 title "A new threshold-voltage model for small-geometry buried-channel MOSFETs" @default.
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- W2024331298 doi "https://doi.org/10.1016/0038-1101(85)90055-3" @default.
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