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• W2024332435 startingPage "13314" @default.
• W2024332435 abstract "A systematic investigation of the origin of the photoinduced changes in the defect density of states in the pseudogap of undoped hydrogenated amorphous silicon (a-Si:H) has been carried out on films deposited by glow-discharge decomposition of silane under different conditions. We used several complementary techniques, such as junction capacitance versus temperature, electrical conductivity, electron-spin resonance, and photothermal deflection spectroscopy, to determine the shifts in the Fermi-level (${mathit{E}}_{mathit{F}}$) position as well as the variation of the defect density of states, within the forbidden gap, after annealing (state A) and light-soaking (state B) treatments. The total hydrogen concentration and the hydrogen bonding configurations of each sample were analyzed by elastic-recoil-detection analysis (ERDA) and infrared (ir) transmission measurements, respectively, both for state A and state B. The experimental results show in all cases an increase in the bulk density of states accompanied by a shift of ${mathit{E}}_{mathit{F}}$ towards the valence band in the light-soaked state B with respect to the annealed state A, but these changes depend considerably on the deposition conditions of the films. On the other hand, no change is detected either in the ERDA or in the ir spectra. Moreover, it is found that when the saturated light-soaked samples are partially annealed at temperatures ranging from 110 ifmmode^circelsetextdegreefi{}C to 130 ifmmode^circelsetextdegreefi{}C and for times less than 15 min, and then left in the dark at room temperature for 24 h and more, a long-time process, characterized by a variation of the density of states as well as by a motion of ${mathit{E}}_{mathit{F}}$ within the gap, occurs in these films. The observed behavior is completely different from one sample to another. From the analysis of the results, it is suggested that in some samples the photodegradation is mainly due to a trapping of the excess free carriers at charged spinless defects, which must be present in the sample at equilibrium in addition to the neutral dangling bonds." @default.
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• W2024332435 date "1992-06-15" @default.
• W2024332435 modified "2023-10-14" @default.
• W2024332435 title "Systematic study of light-induced effects in hydrogenated amorphous silicon" @default.
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• W2024332435 doi "https://doi.org/10.1103/physrevb.45.13314" @default.
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