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- W2024347899 abstract "We have recently explored the nature and stability of native defects in high-purity semi-insulating 4H-SiC bulk substrates grown by PVT and HTCVD methods after post-growth anneal treatments up to 2400oC using electron paramagnetic resonance (EPR) and low-temperature photoluminescence (PL) experiments. In the present study we have extended these investigations to SI 4H-SiC subjected to the same post-growth high-temperature anneal treatments, where significantly enhanced carrier lifetimes have been reported for such conditions, but cooled at different rates ranging from ~2-25oC/min. Previously, the intensities of the native defects decreased monotonically with anneals from 1200–1800oC; however, it was recently observed that several of these defects reappear after annealing at 2100oC and above. Our results illustrate the effects of the post-growth anneal treatments and cool-down rates on the concentrations of native defects." @default.
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- W2024347899 date "2008-09-01" @default.
- W2024347899 modified "2023-09-24" @default.
- W2024347899 title "Behavior of Native Defects in Semi-Insulating 4H-SiC after High Temperature Anneals and Different Cool-Down Rates" @default.
- W2024347899 doi "https://doi.org/10.4028/www.scientific.net/msf.600-603.389" @default.
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