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• W2024370188 endingPage "5769" @default.
• W2024370188 startingPage "5759" @default.
• W2024370188 abstract "The structural and morphological properties of thin Ge layers deposited on $mathrm{Si}(111)7ifmmodetimeselsetexttimesfi{}7$ substrate kept at room temperature and subsequently annealed at several temperatures have been investigated using near-edge x-ray absorption spectroscopy (XAS) at the Ge L edges. Experimental data have been compared with spectra calculated by a multiple-scattering approach in order to obtain the best-fitting interface model. Our results indicate an amorphous growth at room temperature, for coverages ranging from 3 to 14 ML. Two different behaviors are observed after annealing for Ge coverages below and above 3 ML, the so-called critical thickness. For very thin layers, XAS suggests the formation of a continuous crystalline structure driven by strong intermixing processes. Ge layers thicker than the critical thickness have been found to form three-dimensional islands characterized by a lattice-parameter relaxation and dispersed on a wetting layer." @default.
• W2024370188 created "2016-06-24" @default.
• W2024370188 creator A5013572708 @default.
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• W2024370188 date "1999-08-15" @default.
• W2024370188 modified "2023-10-18" @default.
• W2024370188 title "Electronic density of empty states of Ge/Si(111) epitaxial layers: Theory and experiment" @default.
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• W2024370188 doi "https://doi.org/10.1103/physrevb.60.5759" @default.
• W2024370188 hasPublicationYear "1999" @default.
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