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- W2024393446 abstract "We fabricated self-assembled InAs quantum dots (QDs) embedded with a combined set of a GaNAs strain-compensating layer (SCL) and an InGaAs strain-reducing layer (SRL) by using atomic hydrogen-assisted molecular beam epitaxy (H-MBE) with a RF plasma nitrogen source. By inserting an InGaAs SRL between the InAs QD layer and GaNAs SCL, we were able to achieve a significant improvement of optical properties. A 1.3μm-range photoluminescence (PL) emission was clearly obtained at 300 K from QDs embedded in a 5 nm-thick In0.15Ga0.85As SRL followed by a 20 nm-thick GaN0.008As0.992 SCL. Further, PL emission from the first excited state of QDs was also observed under a high excitation intensity of ∼20.0W/cm2." @default.
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- W2024393446 date "2007-04-01" @default.
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- W2024393446 title "MBE growth of InAs self-assembled quantum dots embedded in GaNAs strain-compensating layers" @default.
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- W2024393446 doi "https://doi.org/10.1016/j.jcrysgro.2006.11.059" @default.
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