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- W2024401874 abstract "A method for the fabrication of n-type porous silicon (n-PS) is developed. The Hall effect is applied in the fabrication process. The majority carriers in n-type Si (electrons) are swept down by the Lorentz force. Enough holes continuously appear on the surface layer to participate in chemical reaction during the etching process. Illumination sources are not necessary in this method. Therefore, no illumination limit has to be concerned in the formation of deep PS layer. The morphology, porosity, and photoluminescence of the n-PS prepared by the proposed method are investigated. Strong visible photoluminescence emissions are demonstrated on n-PS at about 650nm." @default.
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- W2024401874 date "2006-09-18" @default.
- W2024401874 modified "2023-09-26" @default.
- W2024401874 title "Manufacturing method for n-type porous silicon based on Hall effect without illumination" @default.
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- W2024401874 doi "https://doi.org/10.1063/1.2354451" @default.
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