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- W2024440785 abstract "The phenomenon of indium migration off the sidewalls of features on patterned GaAs substrates during MBE growth has been studied. The level of migration depends strongly on the arsenic flux and the growth temperature. Modulating the arsenic flux during the growth of multilayer structures allows the number of active quantum wells to vary from one region of a device to another." @default.
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- W2024440785 date "1995-04-10" @default.
- W2024440785 modified "2023-09-27" @default.
- W2024440785 title "<title>Selectively varying the number of active quantum wells in integrated devices using only one growth step</title>" @default.
- W2024440785 doi "https://doi.org/10.1117/12.206336" @default.
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